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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    10-20
  • Thickness:

    6"
  • Surface:

    675
  • Grade:

    SEMI Prime, 1Flat (57.5mm), TTV<7µm, Bow<10µm, Warp<20µm, Empak cst
  • Delivery Time:

    15-30 days
$50.00
$50.00
× Placeholder Materials
  • Material:

    Indium Phosphide
  • Diameter:

    76.2mm
  • Type:

    Si
  • Dopant:

    Fe
  • Growth Method:

    VGF
  • Orientations:

    (100)
  • Resistivity:

    5000000
  • Thickness:

    600-650µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$250.00
$250.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-100
  • Thickness:

    6"
  • Surface:

    1,500
  • Grade:

    SEMI Prime, 1Flat (57.5mm),TTV<1µm,Individual cst, Groups of 5 wafers
  • Delivery Time:

    15-30 days
$200.00
$200.00

Cart totals

Subtotal $500.00
Shipping

Shipping to CA.

Tax $0.00
Total $500.00 USD
Proceed to checkout