× |
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Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>3,000
-
Thickness:
6"
-
Surface:
3,000
-
Grade:
TEST - Large back-side scratch, NO Flats, MCC Lifetime>1,500µs, Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
12"
-
Surface:
775
-
Grade:
SEMI Prime Notch, TTV<5µm, Bow<10µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$140.00 |
|
$140.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
100mm
-
Type:
Si
-
Dopant:
Undoped
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
>1E7
-
Thickness:
500-600µm
-
Surface:
P/P
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
|