× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMI PrimeNotch, Laser Mark on front side, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.005-0.008
-
Thickness:
3"
-
Surface:
150 ±15
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
500
-
Grade:
SEMI Prime,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
6"
-
Surface:
6,350
-
Grade:
Prime,NO Flats, Sealed in a multi-wafer box of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(111.00)
-
Resistivity:
1-100
-
Thickness:
2900-3100µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|