× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-25 {9-24}
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, TTV<5µm, Bow<20µm, Warp<40µm, Empak cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
2.5-3.5
-
Thickness:
2"
-
Surface:
275
-
Grade:
SEMI Prime, 2Flats, SF 180° from PF (not 45° CW from PF), hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-8°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ NTD300-800 {517-529}
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, MCC Lifetime=~1,390µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9°towards[001]]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
>10
-
Thickness:
32µm
-
Surface:
2,000 ±50
-
Grade:
Zero X-Ray Diffraction plate, with central sample pocket 5mmØ×200µm, NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
|