× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
2,200
-
Grade:
SEMI Prime, 1Flat (57.5mm),TTV<10µm,Individual cst, Group of 4 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-3
-
Thickness:
3"
-
Surface:
325
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
2,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Sold in groups of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
3"
-
Surface:
318 ±7
-
Grade:
SEMI Prime, 2Flats,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ2,700-3,300
-
Thickness:
6"
-
Surface:
900
-
Grade:
SEMI, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
4"
-
Surface:
475
-
Grade:
SEMI Prime, 1Flat, with Front-Side LaserMark,TTV<1µm,, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-15
-
Thickness:
6"
-
Surface:
400
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Ga
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.01-.04
-
Thickness:
350-400µm
-
Surface:
P/E
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(111)
-
Resistivity:
1-100
-
Thickness:
11900-12100µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
600
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ>1,000
-
Thickness:
2"
-
Surface:
279
-
Grade:
Prime, 2Flats (PF at , SF at CW 70.5° from PF), hard cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|