× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35
-
Thickness:
6"
-
Surface:
762 ±12
-
Grade:
Prime, 1Flat,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000 {22,000-26,000}
-
Thickness:
2"
-
Surface:
100 ±10
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, hard cst, Groups of 10 and 5 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|