|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±0.1°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
3"
-
Surface:
350
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
2"
-
Surface:
190
-
Grade:
Prime, 1Flat, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
10-15
-
Thickness:
4"
-
Surface:
1,600
-
Grade:
SEMI Prime, 1 Flat at , Individual cst, sold singly
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[311] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
650
-
Grade:
Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(111)
-
Resistivity:
1-20
-
Thickness:
350-400µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[522]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
625
-
Grade:
Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ40-90
-
Thickness:
6"
-
Surface:
1,500 ±15
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV2,400µs
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|
× |
|
Materials
-
Material:
Clean Room
-
Diameter:
38.1mm
-
Type:
Single Wafer Shipper
-
Dopant:
ePak
-
Growth Method:
Lid/Base/Spring
-
Resistivity:
Holds1Wafer
-
Thickness:
N/A
-
Surface:
N/A
-
Grade:
Clean
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.01-0.10
-
Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Group of 3 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|
|