× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-40
-
Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI, 1Flat, Individual cst, Sold in Packs of 10 & 3 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
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Materials
-
Material:
Germanium
-
Diameter:
25.4mm
-
Type:
P
-
Dopant:
Sb
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
5-40
-
Thickness:
225-275µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005 {0.0036-0.0041}
-
Thickness:
6"
-
Surface:
675 ±15
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm, LTO (0.3-0.6)µm thick, in Empak cassettes of 7, 16, 19 wafers
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|