× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
MCZ0.01-0.02 {0.013-0.017}
-
Thickness:
6"
-
Surface:
675 ±15
-
Grade:
SEMI Prime, 1 SEMI Flat 57.5mm at ±0.5°, Oxygen=(3-9)ppma, Carbon<1ppma,Back-side Acid etched,Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ2,000-6,000
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, LaserMark, TTV<6µm, Bow<15µm, Warp1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
3"
-
Surface:
370
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[911] ±0.5°
-
Type:
G/G
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.1-35.0
-
Thickness:
6"
-
Surface:
1,500
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|