|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35
-
Thickness:
5"
-
Surface:
762 ±12
-
Grade:
SEMI Prime, 1Flat,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[533] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.010-0.023
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
Prime, 1Flat at , TTV<5µm , Front-Side LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
BROKEN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ4,000-8,000
-
Thickness:
3"
-
Surface:
380
-
Grade:
Broken P/E wafer, 1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35
-
Thickness:
6"
-
Surface:
762 ±12
-
Grade:
Prime, 1Flat,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|
|