× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ>2,500
-
Thickness:
6"
-
Surface:
775
-
Grade:
SEMI Prime, 1Flat (57.5mm),TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-10°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ800-1,000
-
Thickness:
6"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000 {21,329-200,000}
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,300µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>9,500
-
Thickness:
6"
-
Surface:
1,000 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,000µs,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|