|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.25°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
10-20
-
Thickness:
6"
-
Surface:
625 ±15
-
Grade:
SEMI Prime 2Flats {PF at ±0.5°,SF at ±5.0° CW 109.5° from PF}, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
4"
-
Surface:
2,950 ±50
-
Grade:
SEMITEST (Scratched),2Flats, in Unsealed Individual cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|
× |
|
Materials
-
Material:
Clean Room
-
Diameter:
150mm
-
Type:
Single Wafer Shipper
-
Dopant:
ePak
-
Growth Method:
Lid/Base/Spring
-
Resistivity:
Holdsl Wafer
-
Thickness:
N/A
-
Surface:
N/A
-
Grade:
Clean
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-50 {10-23}
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, TTV<5µm, Bow<15µm, Warp<30µm,Surface Metals<5E10 a/cm²,Empak cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
|
|