× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.003
-
Thickness:
4"
-
Surface:
1,975 ±50
-
Grade:
Prime,NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Clean Room
-
Diameter:
100mm
-
Type:
Round
-
Dopant:
Single Wafer
-
Growth Method:
ePak
-
Orientations:
Lid/Base/Spring
-
Resistivity:
N/A
-
Thickness:
Holds1Wafer
-
Surface:
N/A
-
Grade:
Clean Room
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
6"
-
Surface:
1,000 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
350-400µm
-
Surface:
P/E/DTOx
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|