× |
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Materials
-
Material:
Silicon
-
Diameter:
[111-4°] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.0023-0.0026
-
Thickness:
6"
-
Surface:
508 ±15
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<8µm, in Empak cassettes of 2 & 4 wafers
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
150mm
-
Type:
Si
-
Dopant:
Undoped
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
>1E7
-
Thickness:
500-600µm
-
Surface:
P/P
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-20
-
Thickness:
250-300µm
-
Surface:
P/E/Ni
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|