× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.25°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ3,000-5,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat,in Empak cassettes of 3, 3 & 4 wafers
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000 {21,730-295,100}
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<5µm, Bow<15µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-35
-
Thickness:
3"
-
Surface:
1,400
-
Grade:
SEMI Prime, 1Flat, in individual cassettes (sold in groups of 5 wafers)
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-20
-
Thickness:
1"
-
Surface:
1,500
-
Grade:
Prime,NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|