× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
350
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
150mm
-
Type:
Undoped
-
Dopant:
VGF
-
Growth Method:
-100
-
Orientations:
>1 E7
-
Resistivity:
500-600 pm
-
Thickness:
P/P
-
Surface:
N/A
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
4"
-
Surface:
890 ±15
-
Grade:
SEMITEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±2°
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
0.39"
-
Surface:
27,870 ±100
-
Grade:
Single Crystal Silicon Rod, 9.9mmØ × 27.9±0.1mm,NO Flats
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
|