× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.05-0.20
-
Thickness:
4"
-
Surface:
250
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-25°towards[110]] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
650
-
Grade:
SEMI notch Prime,TTV<1µm, with LaserMark,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±1°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ5,000-10,000
-
Thickness:
2"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, in hard cassettes of 7, 8, 8 wafers
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|