× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
FZ
-
Orientations:
(100.00)
-
Resistivity:
2000-
-
Thickness:
275-325µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
50.8mm
-
Type:
Undoped
-
Dopant:
CZ
-
Growth Method:
-100
-
Orientations:
>30
-
Resistivity:
350-400 pm
-
Thickness:
PIE
-
Surface:
EPI
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[755]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
>0.1
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMI notch Prime, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-4°] ±0.5°
-
Type:
P/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
325
-
Grade:
SEMI Prime, 2Flats,Back-side Sand-blasted with LTO seal,in Empak cassettes (7 + 7 wafers)
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
2"
-
Surface:
500 ±10
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|