× |
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Materials
-
Material:
Silicon
-
Diameter:
[111-4°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ1-5
-
Thickness:
3"
-
Surface:
350
-
Grade:
SEMI Prime, 1Flat, TTV3,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
2"
-
Surface:
265 ±10
-
Grade:
SEMI Prime, 2Flats, TTV<6µm, Bow/Warp<10µm, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|