× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.74°] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
275
-
Grade:
SEMI Prime, 1Flat (57.5mm), with LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
NP/PN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-1.000
-
Thickness:
2"
-
Surface:
280
-
Grade:
SEMI Prime, 2Flats, Both-sides-polished with LPCVD Si3N4 200±10nm thick on both sides, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|