× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.25°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
10-20
-
Thickness:
6"
-
Surface:
625 ±15
-
Grade:
SEMI Prime 2Flats {PF at ±0.5°,SF at ±5.0° CW 109.5° from PF}, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
650
-
Grade:
SEMI Prime, 1Flat,LaserMark, TTV<2µm, Bow<10µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
2"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|