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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
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Resistivity:
1-30
-
Thickness:
4"
-
Surface:
3,000
-
Grade:
SEMITEST (Scratched), 1Flat, Individual cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.3-0.4 {0.33-0.36}
-
Thickness:
3"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat, Empak cst, TTV<5µm
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
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