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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100-9°towards[001]]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    >10
  • Thickness:

    32µm
  • Surface:

    2,000 ±50
  • Grade:

    Zero X-Ray Diffraction plate, with central sample pocket 5mmØ×200µm, NO Flats, Individual cst
  • Delivery Time:

    15-30 days
$90.00
$90.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    1-100
  • Thickness:

    6"
  • Surface:

    1,910 ±10
  • Grade:

    SEMI Prime, 1Flat (57.5mm), TTV<5µm, sealed in stacked trays of 1 & 3 wafer
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    FZ0.5-10.0
  • Thickness:

    3"
  • Surface:

    500
  • Grade:

    SEMI Prime, 2Flats, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00

Cart totals

Subtotal $370.00
Shipping

Shipping to CA.

Tax $0.00
Total $370.00 USD
Proceed to checkout