× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-3
-
Thickness:
3"
-
Surface:
350
-
Grade:
SEMI Prime, 2Flats,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
4"
-
Surface:
2,000
-
Grade:
Prime, 1Flat at ±0.5°, Individual csts in Group of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
3"
-
Surface:
2,000
-
Grade:
SEMITEST, 2Flats, Individual cst, Groups of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|