× |
|
Materials
-
Material:
Silicon
-
Diameter:
[311] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
650
-
Grade:
TEST (Scratched),2Flats, in unsealed Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35 {25-30}
-
Thickness:
8"
-
Surface:
890 ±15
-
Grade:
SEMI notch, Empak cst
-
Delivery Time:
15-30 days
|
$60.00 |
|
$60.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[911] ±0.5°
-
Type:
G/G
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.1-35.0
-
Thickness:
6"
-
Surface:
1,500
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000 {21,730-295,100}
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<5µm, Bow<15µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±1°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ5,000-10,000
-
Thickness:
2"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
450
-
Grade:
SEMI Prime, 1Flat,TTV<2µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|