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Materials
-
Material:
Silicon
-
Diameter:
[221] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
2"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat at , MCC Lifetime>1,000µs, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
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Materials
-
Material:
Silicon
-
Diameter:
150mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-100
-
Thickness:
500-550µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$60.00 |
|
$60.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
OxP/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats, TTV<5µm,DRY Thermal Oxide 20±2nm thick on both sides,Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
|