× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
3"
-
Surface:
640
-
Grade:
SEMI Prime, 2Flats,TTV<1µm,Front LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Indium Phosphide
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Si
-
Growth Method:
VGF
-
Orientations:
(100)
-
Thickness:
275-325µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-20
-
Thickness:
500-550µm
-
Surface:
P/E/Ni
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ2,000-5,000
-
Thickness:
2"
-
Surface:
331
-
Grade:
SEMITEST (Scratched),1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ2,000-3,000
-
Thickness:
4"
-
Surface:
775
-
Grade:
SEMI Prime, 1Flat, TTV<10µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>2,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats {SF 180° from PF}, TTV<4µm, Bow<8µm, Warp<16µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|