× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
3"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat,Back-side has a non-Prime polish, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
10-15
-
Thickness:
4"
-
Surface:
1,600
-
Grade:
SEMI Prime, 1 Flat at , Individual cst, sold singly
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>1,000
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat, Empak cst, MCC Lifetime>3,000µs
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|