× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.007
-
Thickness:
4"
-
Surface:
1,975
-
Grade:
SEMI Prime, 2Flats,Free of Striations,Individual cst sealed in a group of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
125mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
FZ
-
Orientations:
(100)
-
Resistivity:
1000-
-
Thickness:
875-925µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
3"
-
Surface:
600
-
Grade:
SEMI Prime, 2Flats,TTV<2µm, Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[553] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
SEMI Prime, 1Flat, TTV1,500µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|