× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
3"
-
Surface:
2,000
-
Grade:
SEMITEST, 2Flats, Individual cst, Groups of 10 wafers
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000 {22,000-26,000}
-
Thickness:
2"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, Bow/Warp<20µm, hard cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ240-280
-
Thickness:
5"
-
Surface:
240 ±10
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$70.00 |
|
$70.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ20-100
-
Thickness:
4"
-
Surface:
300 ±5
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|