× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.005
-
Thickness:
6"
-
Surface:
1,300
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMITEST (Spotted defect) - wafers with three layers of SiO2 and Ge deposited by Electron Beam Evaporation,2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[533] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.010-0.023
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
Prime, 1Flat at , TTV<5µm , Front-Side LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[17,10,10]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
>0.1
-
Thickness:
6"
-
Surface:
700
-
Grade:
SEMI Prime, Notch, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|