× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-8°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ NTD300-800 {517-529}
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, MCC Lifetime=~1,390µs, in Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.05-0.15
-
Thickness:
1"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
400
-
Grade:
SEMI Prime, 1Flat (57.5mm),TTV<10µm, Bow/Warp<20µm,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ50-70
-
Thickness:
6"
-
Surface:
460
-
Grade:
SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
100mm
-
Type:
Single Wafer Shipper
-
Dopant:
ePak
-
Resistivity:
Holds1Wafer
-
Thickness:
N/A
-
Surface:
N/A
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
10-24
-
Thickness:
6"
-
Surface:
625
-
Grade:
SEMI Prime, 1Flat at , Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|