× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/G
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Thickness:
10.0 ±0.2µm
-
Surface:
1,500 ±50
-
Grade:
Prime,NO Flats, Polished side Ra<3µ rms, hard cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.74°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ50-100
-
Thickness:
6"
-
Surface:
480
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µ
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
650
-
Grade:
JEIDA Prime,TTV<1µm,LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|