× |
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Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
350-400µm
-
Surface:
P/E/Ni
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.02°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
350
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-30
-
Thickness:
6"
-
Surface:
3,050 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm,Groups of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|