× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>9,500
-
Thickness:
6"
-
Surface:
1,000 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,000µs,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
4"
-
Surface:
700 ±50
-
Grade:
SEMITEST (Defective, scratched, high TTV),2Flats, in Unsealed Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
Any
-
Dopant:
Any
-
Growth Method:
CZ
-
Orientations:
Any
-
Resistivity:
Any
-
Thickness:
350-600µm
-
Surface:
P/E
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.80-0.99
-
Thickness:
3"
-
Surface:
400
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Indium Phosphide
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Si
-
Growth Method:
VGF
-
Orientations:
(100)
-
Thickness:
600-650µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$3,000.00 |
|
$3,000.00 |
|