× |
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Materials
-
Material:
Silicon
-
Diameter:
[211] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
10-35
-
Thickness:
6"
-
Surface:
625
-
Grade:
Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
NP/PN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-10
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats,Both sides polished with LPCVD Si3N4 5,000±250µ thick, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000 {22,000-26,000}
-
Thickness:
2"
-
Surface:
100 ±10
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, hard cst, Groups of 10 and 6 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|