× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-0.6
-
Thickness:
99.25µm
-
Surface:
3,000
-
Grade:
1Flat,Small diameter: 99.25±0.25mm, Packs of 4 & 5 wafers
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.7-1.3
-
Thickness:
2"
-
Surface:
178 ±8
-
Grade:
SEMI Prime,2Flats (SF 90° CCW from PF), TTV<2.54µm,hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±0.2°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.01-0.02 {0.012-0.018}
-
Thickness:
4"
-
Surface:
300 ±5
-
Grade:
SEMI Prime, 2Flats,TTV<3µm,Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|