× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
2"
-
Surface:
6,000
-
Grade:
Prime,NO Flats, Individual cst, Pack of 5 wafers
-
Delivery Time:
15-30 days
|
$120.00 |
|
$120.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.005
-
Thickness:
44×44µm
-
Surface:
500
-
Grade:
Silicon Frames:44mm square with 40mm square removed from center (drawing available on request)
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
2"
-
Surface:
775 ±10
-
Grade:
SEMI Prime, 1Flat, TTV<5µm,LaserMark, TTV and Bow measured for every wafer,hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|