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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    C/C
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    4-10
  • Thickness:

    4"
  • Surface:

    25,000 ±50
  • Grade:

    SEMI, 1Flat, TTV<30µm, Bow/Warp<40µm, Individual cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    C/C
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    6"
  • Surface:

    650
  • Grade:

    Prime,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding, Minor edge-chips, In single wafer cst, Sold in groups of 5 wafers
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    8-12
  • Thickness:

    3"
  • Surface:

    400
  • Grade:

    SEMI Prime, 2Flats,TTV<5µm,Empak cst
  • Delivery Time:

    15-30 days
$130.00
$130.00

Cart totals

Subtotal $530.00
Shipping

Shipping to CA.

Tax $0.00
Total $530.00 USD
Proceed to checkout