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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
E/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10 {5.9-9.1}
-
Thickness:
4"
-
Surface:
2,150
-
Grade:
SEMI Prime, 1Flat,Measured thickness 2,150±7µm, TTV<5µm,Can be sold individually
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
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Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
1-100
-
Thickness:
4900-5100µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
170 ±1
-
Grade:
SEMI TEST (Front Side Perfect, Back Side Scratched),NO Flats, Super Flat, TTV<1µm,Empak cst,
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|