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Materials
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Material:
Silicon
-
Diameter:
[100]
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Type:
NP/PN
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
10-20
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Thickness:
4"
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Surface:
525
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Grade:
SEMI Prime, 2Flats,with 150nm of LPCVD Stoichiometric Silicon Nitride on both sides, Empak cst
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Delivery Time:
15-30 days
|
$40.00 |
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$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
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Thickness:
4"
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Surface:
890 ±15
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Grade:
SEMITEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cst
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Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|