× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(111)
-
Resistivity:
1-20
-
Thickness:
350-400µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-15
-
Thickness:
6"
-
Surface:
400
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
2,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Sold in groups of 5 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Ga
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.01-.04
-
Thickness:
350-400µm
-
Surface:
P/E
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<10µm, Bow<15µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|