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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
NP/PN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
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Resistivity:
1-10
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats,Both sides polished with LPCVD Si3N4 5,000±250µ thick, Empak cst
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Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|