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Materials
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Material:
Silicon
-
Diameter:
[100]
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Type:
P/E
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>20,000 {21,730-295,100}
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Thickness:
4"
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Surface:
525
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Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Back-side Acid-Etched, TTV<5µm, Bow<15µm, Warp<30µm, Empak cst
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Delivery Time:
15-30 days
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$80.00 |
|
$80.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
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Type:
OxP/POx
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
1-10
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Thickness:
4"
-
Surface:
500
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Grade:
SEMI Prime, 2Flats,DRY Thermal Oxide 50±5nm thick on both sides,Empak cst
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Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|