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Materials
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Material:
Silicon
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Diameter:
[111] ±0.5°
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Type:
P/E
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:P
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Resistivity:
>10
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Thickness:
3"
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Surface:
500
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Grade:
Prime, 1Flat, Empak cst
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Delivery Time:
15-30 days
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$200.00 |
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$200.00 |
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Materials
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Material:
Silicon
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Diameter:
76.2mm
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Type:
P
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Dopant:
Boron
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Growth Method:
FZ
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Orientations:
(100)
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Resistivity:
>3000
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Thickness:
350-400µm
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Surface:
P/E
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Grade:
PRIME
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Delivery Time:
15-30 days
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$50.00 |
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$50.00 |
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Materials
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Material:
Silicon
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Diameter:
[100]
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Type:
PlyAP/E
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:As
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Resistivity:
0.001-0.005
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Thickness:
4"
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Surface:
525
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Grade:
With layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,[More Info]
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Delivery Time:
15-30 days
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$80.00 |
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$80.00 |
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