× |
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Materials
-
Material:
Indium Phosphide
-
Diameter:
100mm
-
Type:
Si
-
Dopant:
Fe
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
5000000
-
Thickness:
600-650µm
-
Surface:
P/E
-
Grade:
PRIME
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Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
40-60µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$30.00 |
|
$30.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.1-0.2
-
Thickness:
4"
-
Surface:
445 ±15
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, Empak cst
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Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|