× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
E/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ8-12
-
Thickness:
4"
-
Surface:
200
-
Grade:
SEMI, 1Flat,Bright-Etched, MCC Lifetime>200µs,Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
4"
-
Surface:
3,000
-
Grade:
SEMI Prime, 2Flats, Individual cst in Groups of 10 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-50
-
Thickness:
4"
-
Surface:
620 ±1
-
Grade:
SEMI Prime, 2 Flats,Ultra flat TTV<0.25µm, Bow<1µm, Warp<6µm, Wafer with LaserMark and meaurements, Scratched, can be repolished for additional fee, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|