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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    NP/PN
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    10-20
  • Thickness:

    4"
  • Surface:

    525
  • Grade:

    SEMI Prime, 2Flats,with 150nm of LPCVD Stoichiometric Silicon Nitride on both sides, Empak cst
  • Delivery Time:

    15-30 days
$40.00
$40.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.5-10.0
  • Thickness:

    4"
  • Surface:

    890 ±15
  • Grade:

    SEMITEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cst
  • Delivery Time:

    15-30 days
$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.013-0.020
  • Thickness:

    6"
  • Surface:

    525
  • Grade:

    SEMI Prime, 1Flat (57.5mm), Empak cst
  • Delivery Time:

    15-30 days
$110.00
$110.00

Cart totals

Subtotal $200.00
Shipping

Shipping to CA.

Tax $0.00
Total $200.00 USD
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