× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
3"
-
Surface:
5,000
-
Grade:
SEMI Prime, 1Flat, Individual cst, Group of 2 wafers
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
150mm
-
Type:
Si
-
Dopant:
Undoped
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
>1E7
-
Thickness:
610-660µm
-
Surface:
P/P
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.01-0.02
-
Thickness:
6"
-
Surface:
625
-
Grade:
SEMI Prime, JEIDA Flat (47.5mm) at , Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|