× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
1"
-
Surface:
1,000
-
Grade:
Prime,NO Flats, hard cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-3
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
6"
-
Surface:
6,350
-
Grade:
Prime,NO Flats, Sealed in a multi-wafer box of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±1.0°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.005-0.020 {0.010-0.020}
-
Thickness:
6"
-
Surface:
315 ±15
-
Grade:
Prime, 1Flat {42.5mm long, 15±1° CW from }, Back-side Acid etched, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ7,000-8,000 {7,025-7,856}
-
Thickness:
6"
-
Surface:
825
-
Grade:
SEMI, 1Flat,MCC Lifetime=7,562µs,in Unsealed Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|